天目湖先进储能技术研究院

Technical Parameters

1. Mass Resolution at Low Masses: m/∆m ≥ 12,000 for m/z = 28 (Si+) and 29 (SiH+)

2. Mass Resolution at High Masses: m/∆m ≥ 16,000 for m/z > 200

3. Mass Resolution for Insulating Materials: m/∆m ≥ 12,000 for PET standard sample at m/z = 104

4. Mass Range: 1 to over 12000 amu

5. Mass Accuracy: < 2 mu @ m < 100 u; < 10 ppm @ m > 100 u

6. Spatial Resolution: Horizontal Spatial Resolution: ≤ 70nm

7. Sensitivity: ≥ 5.5 ×108 Al+ cts / nanocoulomb for m/z = 27

8. Signal-to-Noise Ratio: ≥ 2 × 105

9. Energy Range of GCIB Cluster Ion Source: 1keV ~ 20 keV

Application Range

TOF-SIMS is widely used in various material development, material analysis, multilayer film/structure analysis, and failure mechanism analysis and research, playing an irreplaceable role.

Research and Development Fields: Semiconductor devices, nano-devices, biomedicine, quantum structures, energy battery materials, etc.

High-tech Industries: Polymer materials, metals, semiconductors, glass ceramics, nano coatings, paper, films, fibers, etc.