Test and Failure Analysis

X-ray Photoelectron Spectroscopy (XPS)

Equipment model:PHI 5000 VersaProbe III
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Technical Parameters

  1. Energy Resolution: FWHM of Ag3d5/2 peak < 0.48eV; FWHM of O=C-O peak in C1s spectrum < 0.82eV

  2. Minimum x-ray Beam Spot Size: <10.0μm (x-axis); <10.0μm (y-axis)

  3. Maximum Beam Current of Ar Ion Sputter Gun: >5.0μA @5kV

  4. Differential Pressure of Ar Ion/C60 Ion Sputter Gun: < 6.7x10-6 Pa (5x10-8Torr)

  5. Maximum Current of Ar Gas Cluster Ion Gun: >40nA @ 20kV

  6. Minimum Beam Spot Size of Ar Gas Cluster Ion: 500 μm @ 20 kV

  7. Thermal Performance of Sample Stage: -140°C to 800°C


Application Range

Inorganic compounds, alloys, polymers, energy batteries, surface defects (corrosion, foreign substances, contamination, uneven distribution, etc.), surface multilayer films, etc.


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Scanning Electron Microscope (SEM)
Technical ParametersSecondary Electron Resolution: 0.8 nm (acceleration voltage 15 kV) (standard mode, not in any deceleration mode)1.1 nm (acceleration voltage 1 kV) (deceleration mode)Magnification: 20 to 1000k Acceleration Voltage: 20-1000kElectronic Displacement: ±12μm (WD=8mm)Aperture: 4-hole objective movable aperture system: built-in self-cleaning device (aperture 30, 50, 50, 100μm)Detectors: Lower and Upper secondary electron detectors, Upper filtered backscatter detectorSignal Selection: Secondary electron image, Backscattered electron image, Mixed imageRapid Sample Exchange System: 100mm diameter large sample exchange chamber, sample exchange time is 30 secondsVacuum Transfer System: Hitachi original vacuum transfer systemEnergy Spectrometer: Bruker 60mm2 energy spectrometerApplication RangeThe deceleration function of acceleration voltage has a series of advantages such as shorter wavelength, smaller aberrations, and higher resolution. It can reduce sample damage while obtaining low-voltage high-resolution images.The SE/BSE signal reception function in proportion. The electron microscope is equipped with Lower and Upper secondary electron detectors, and a Upper filtered backscatter probe. By changing the voltage of the internal transformer electrode of the lens, the detector can capture secondary electrons and backscattered electrons, mix them in any proportion (100 levels), achieve optimal contrast observation, suppress charge and edge effects, and obtain the best contrast SEM image.

Detail

Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)
Technical ParametersMass Resolution at Low Masses: m/∆m ≥ 12,000 for m/z = 28 (Si+) and 29 (SiH+)Mass Resolution at High Masses: m/∆m ≥ 16,000 for m/z > 200Mass Resolution for Insulating Materials: m/∆m ≥ 12,000 for PET standard sample at m/z = 104Mass Range: 1 to over 12000 amuMass Accuracy: < 2 mu @ m < 100 u; < 10 ppm @ m > 100 uSpatial Resolution: Horizontal Spatial Resolution: ≤ 70nmSensitivity: ≥ 5.5 ×108 Al+ cts / nanocoulomb for m/z = 27Signal-to-Noise Ratio: ≥ 2 × 105Energy Range of GCIB Cluster Ion Source: 1keV ~ 20 keVApplication RangeTOF-SIMS is widely used in various material development, material analysis, multilayer film/structure analysis, and failure mechanism analysis and research, playing an irreplaceable role.Research and Development Fields: Semiconductor devices, nano-devices, biomedicine, quantum structures, energy battery materials, etc.High-tech Industries: Polymer materials, metals, semiconductors, glass ceramics, nano coatings, paper, films, fibers, etc.

Detail

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